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| WFP12N60 WFP Silicon N-Channel MOSFET Features 12A, 600V,RDS(on)(Max 0.65)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi 's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ, Tstg TL Junction and Storage Temperature 2.0 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) (Note 2) (Note 1) (Note 3) (Note1) 7.6 48 30 880 25 4.5 250 A A V mJ mJ V/ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 600 12 Units V A Maximum lead Temperature for soldering purposes Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Value Min - Typ 0.5 - Max 0.50 62.5 Units /W /W /W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFP12N60 WFP Electrical Characteristics (Tc = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain-source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source Qg plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Qgs Qgd VGS = 10 V, nC ID = 1 A (Note4,5) 7.5 18.5 - Symbol IGSS V(BR)GSS IDSS V(BR)DSS BVDSS/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 250 A, VGS = 0 V ID=250A, Referenced to Min 30 600 - Type 0.5 0.37 15 1580 180 20 25 100 130 100 Max 100 1 4.5 0.65 2055 235 25 60 210 270 210 Unit nA V A V V/ V S 25 VDS = 10 V, ID =250 A VGS = 10 V, ID = 6.0A VDS = 50 V, ID = 6.0A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =250 V, ID =12A RG=9.1 RD=31 (Note4,5) VDD = 400 V, 43 56 3 - pF ns Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type 418 4.85 Max 12 48 1.4 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=11.2mH,IAS=12A,VDD=50V,RG=25,Starting TJ=25 3.ISD12A,di/dt300A/us, VDD 2/7 Steady, all for your advance WFP12N60 WFP Fig.1 On-State Characteristics Fig.2 Transfer Characteristics Fig.3 Capacitance Variation vs Drain voltage Fig.4 Breakdown Voltage Variation vs Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance WFP12N60 WFP Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, all for your advance WFP12N60 WFP Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFP12N60 WFP Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFP12N60 WFP TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance |
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